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28N60M2 |
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| Part Number | 28N60M2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. S(3) AM15572V1 Order code STB28N60M2 STI28N60. |
| Features |
Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
VDS @ TJmax 650 V
RDS(on) max. 0.150 Ω
ID 22 A
Figure 1: Internal schematic diagram
D (2 TAB )
Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications LCC converters, resonant converters Description These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rend. |
| Datasheet |
 28N60M2 Data Sheet
PDF 1.09MB |
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