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28N15 |
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| Part Number | 28N15 |
| Manufacturer | Fairchild Semiconductor |
| Description | Features This N-Channel enhancement mode power MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC) resistance, and to provide superior. |
| Features |
This N-Channel enhancement mode power MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC) resistance, and to provide superior switching performance and • Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor • 100% Avalanche Tested control, and variable switching power applications. . |
| Datasheet |
 28N15 Data Sheet
PDF 2.09MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 28N03L |
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| 2 | 28N50-CB |
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Desde 2024. D4U Semiconductor.
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