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STANSON |
DC-DC Step-Up Converter z Fast 1.2MHz Switching Frequency z High Efficiency up to 85% z Drives up to Four LEDs From 3.2V Supply z Low Quiescent Current z Internal Over Temperature and Current Limiting Shutdown Function z Internal Soft-Star |
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STANSON |
DC-DC Step-Up Converter z Current Source with Over Voltage Protection z Fast 0.8MHz Switching Frequency z High Efficiency up to 87% z Drives up to Four LEDs From 3.2V Supply z Drives up to Six LEDs From a 5V Supply z Low Quiescent Current z Disconnects LEDs i |
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Stanson Technology |
P Channel Enhancement Mode MOSFET z -20V/-3.4A, RDS(ON) = 130m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 150m-ohm @VGS = -2.5V z - 20V/-1.7A, RDS(ON) = 190m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current c |
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STANSON |
N-Channel Enhancement Mode MOSFET � 100V/ 10A, RDS(ON) = 140mΩ @VGS = 10V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHN |
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Stanson Technology |
N-Channel Enhancement Mode MOSFET 100V/3.0A, RDS(ON) = 135mΩ @VGS = 10V 100V/2.5A, RDS(ON) = 140mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 1.Gate 2.Source 3.Drain PART M |
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Stanson Technology |
P-Channel Enhancement Mode MOSFET l -100V/-0.8.0A, RDS(ON) = 650m-ohm (Typ.) @VGS = -10V l -60V/-0.4A, RDS(ON) = 700m-ohm @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design |
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STANSON |
N-Channel Enhancement Mode MOSFET ! 100V/12.0A, RDS(ON) = 90mΩ(Typ.) @VGS = 10V ! 100V/8.0A, RDS(ON) = 100mΩ @VGS = 4.0V Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! TO-252 Package design PART MARKING W: Wa |
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STANSON |
P-Channel Enhancement Mode MOSFET l -100V/-13.0A, RDS(ON) = 130mΩ @VGS = -10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON T |
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STANSON |
N-Channel Enhancement Mode MOSFET l 30V/30A, RDS(ON) = 6mΩ（Typ.） @VGS = 10V l 30V/15A, RDS(ON) = 7mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 (1212-8L) package design S S SG Y：Year |
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Stanson Technology |
N-Channel Enhancement Mode MOSFET 100V/1.0A, RDS(ON) = 310mΩ @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 104YA 12 Y: Year Code A: |
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Stanson Technology |
Step-Up DC/DC Converter High Efficiency PFM PART MARKING SOT-23-3L SOP-89 Larger than 85% Efficiency Low Startup Voltage, 0.9V at 1mA Low Ripple and Low Noise Low Quiescent Current Minimum Number of External Components SOT-89 and SOT-23 Small Package 638YA Y¡G Year A¡G Day Code S1638 YW Y¡G |
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Desde 2024. D4U Semiconductor.
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