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ST16N10 |
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| Part Number | ST16N10 |
| Manufacturer | STANSON |
| Description | ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the ... |
| Features |
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Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=100℃
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
TA=25℃
PD
Operation Junction Temperature
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
100 ±20 16.0 12.0 60 16 79 150 -55/150 110
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
ST16N10 2009. V1
ST16N10
N Channel Enhancement Mode MOSFET
16.0... |
| Document |
 ST16N10 Data Sheet
PDF 0.96MB |
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