ST Microelectronics T81 Hoja de datos

No.	parte #	Fabricante	Descripción
1	LET8180	STMicroelectronics	RF POWER TRANSISTORS Ldmos Enhanced Technology g Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 18 289 200 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.45 °C/W January, 28 2003 1/4 LET8180 ELECTRICAL SPECIFICATION (TCASE = 2
2	T810	STMicroelectronics	logic level and standard 8A Triacs
3	STT812A	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Volt
4	M41T81	ST Microelectronics	Serial access real-time clock  For all new designs use M41T81S  Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century  32 KHz crystal oscillator integrating load capacitance (12.5 pF) providing exceptional oscillator stability
5	M41T81S	STMicroelectronics	Serial access real-time clock ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 32 KHz crystal oscillator with integrated load capacitance (12.5 pf) which provides exceptional oscillator stability and high crystal series r
6	T81060	STMicroelectronics	logic level and standard Triacs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA TO-220AB A2 IPAK G A2 A1 A2 G A2 A1 TO-220AB Ins. D²PAK A2 G A1 A2 G A2 A1 A2 G A1 DPAK Description
7	T810-600G	STMicroelectronics	logic level and standard Triacs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA TO-220AB A2 IPAK G A2 A1 A2 G A2 A1 TO-220AB Ins. D²PAK A2 G A1 A2 G A2 A1 A2 G A1 DPAK Description
8	STT818A	ST Microelectronics	HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR Total Dissipation at T C = 25 C Storage Temperature Max. O perating Junction Temperature o w w w t a .D S a e h U 4 t e .c m o SOT23-6L (TSOP6) INTERNAL SCHEMATIC DIAGRAM Parameter Value -30 -30 -5 -3 -6 -0.2 -0.5 1.2 -65 to 150 150 Un
9	STT818B	ST Microelectronics	HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (hFE) ■ 3 A continuous collector current (IC) Applications ■ Power management in portable equipments ■ Switching regulator in battery charger applications Description The devi
10	T810-400B	STMicroelectronics	(T810-xxxB) HIGH PERFORMANCE TRIACS ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4U.com HIGH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY A2 DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented
11	T810-600B	STMicroelectronics	(T810-xxxB) HIGH PERFORMANCE TRIACS ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4UH.coIGmH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY HIGH PERFORMANCE TRIACS A2 DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. Thes
12	T810H	ST Microelectronics	High temperature 8 A sensitive TRIACs ■ ■ ■ ■ ■ A2 Medium current TRIAC Logic level sensitive TRIAC 150 °C max. Tj turn-off commutation Clip bounding RoHS (2002/95/EC) compliant packages A2 G A1 Applications ■ ■ A2 The T810H is designed for the control of AC actuators in appliances a
13	T810T-8T	STMicroelectronics	Triac • Medium current Triac • Three quadrants • ECOPACK2 compliant Applications • General purpose AC line load switching • Motor control circuits • Small home appliances • Lighting • Inrush current limiting circuits • Overvoltage crowbar protection Descri
14	T810T-8FP	STMicroelectronics	Triac • Medium current Triac • Three quadrants • ECOPACK®2 and RoHS compliant component • Complies with UL standards (File ref: E81734) • High performance Triac: – High Tj family – High dI/dt family – High dV/dt family • Insulated package TO-220FPAB: – Ins
15	T81080	STMicroelectronics	logic level and standard Triacs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA TO-220AB A2 IPAK G A2 A1 A2 G A2 A1 TO-220AB Ins. D²PAK A2 G A1 A2 G A2 A1 A2 G A1 DPAK Description