ST Microelectronics STS Hoja de datos

No.	parte #	Fabricante	Descripción
1	STSLVDSP27	STMicroelectronics	8-bit low voltage serializer ■ ■ ■ Sub-low voltage differential signaling: VOD = 150mV with RT = 100Ω, CL = 10pF Clock range: 4 to 27 MHz in parallel mode, BYP = Gnd Operative frequency serial mode, BYP = VDD; DIN0 to DOUT, CLKIN to CLKOUT, fOPR = 1 to 208 MHz max Embedded DPLL
2	STSPIN830	STMicroelectronics	Compact and versatile three-phase and three-sense motor driver  Operating voltage from 7 to 45 V  Maximum output current 1.5 Arms  RDSon HS + LS = 1  typ.  Supporting both single and three shunts architectures  Current control with adjustable OFF time  Current sensing based on external shunt resistors  F
3	STS1NK60Z	STMicroelectronics	N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr
4	STSR2	STMicroelectronics	FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2 automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2M works even at very low duty-cycle values
5	STSR2PM	STMicroelectronics	FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2P automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2PM works even at very low duty-cycle valu
6	STS3401A	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Sou
7	STSPIN32G0251	STMicroelectronics	250V three-phase BLDC controller • Three-phase gate drivers – High-voltage rail up to 250 V – dV/dt transient immunity ±50 V/ns – Gate driving voltage range from 9 V to 20 V • Driver current capability: – 200/350 mA source/sink current @ 25 °C • 32-bit ARM® Cortex®-M0+ MCU core: – U
8	STSPIN240	STMicroelectronics	Low voltage dual brush DC motor driver  Operating voltage from 1.8 to 10 V  Maximum output current 1.3 Arms  RDS(ON) HS + LS = 0.4  typ.  Current control with programmable off-time  Full protection set – Non-dissipative overcurrent protection – Short-circuit protection – Thermal shu
9	STSPIN230	STMicroelectronics	Low voltage triple half-bridge motor driver  Operating voltage from 1.8 to 10 V  Maximum output current 1.3 Arms  RDS(ON) HS + LS = 0.4  typ.  Full protection set – Non-dissipative overcurrent protection – Short-circuit protection – Thermal shutdown – Interlocking function  Energy saving
10	STSPIN233	STMicroelectronics	Low voltage three phase and three sense motor driver  Operating voltage from 1.8 to 10 V  Maximum output current 1.3 Arms  RDS(ON) HS + LS = 0.4 Ω typ.  Full protection set – Non-dissipative overcurrent protection – Short-circuit protection – Thermal shutdown  Supporting three shunt sensing topolo
11	P5NA80FI	ST Microelectronics	STSTP5NA80FI I 800 800 ± 30 o Unit V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C
12	STS8DNH3LL	ST Microelectronics	Dual N-CHANNEL Power MOSFET Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th
13	STS2307A	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS =0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.5A V
14	STS3409	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Sou
15	STS2302A	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23-3L D S G G S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-S
16	STSPIN220	STMicroelectronics	Low voltage stepper motor driver • Operating voltage: from 1.8 to 10 V • Maximum output current: 1.3 Arms • RDS(ON) HS + LS = 0.4 Ω typ. • Microstepping up to 1/256th of a step • Current control with programmable off-time • Full protection set – Non-dissipative overcurrent protectio
17	STSPIN32F0602	STMicroelectronics	600V three-phase controller  Three-phase gate drivers – High voltage rail up to 600 V – Driver current capability: STSPIN32F0601: 200/350 mA source/sink current STSPIN32F0602: 1/0.85 A source/sink current – dV/dt transient immunity ±50 V/ns – Gate driving voltage range from 9V
18	STS11NF30L	ST Microelectronics	N-CHANNEL PowerMESH MOSFET Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th
19	STS4PF20V	ST Microelectronics	P-CHANNEL POWER MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MO
20	STSR2P	STMicroelectronics	FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2P automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2PM works even at very low duty-cycle valu