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P5NA80FI |
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| Part Number | P5NA80FI |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
I 800 800 ± 30
o
Unit
V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o V V V 2.8 1.8 19 45 0.36 2000 A A A W W/ o C V o o 4.7 3 19 125 1 -65 to 150 150 C C ( •) Pulse width limited by safe operating area November 1996 1/10 www.DataSheet4U.com www.D... |
| Document |
 P5NA80FI Data Sheet
PDF 303.62KB |
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