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STMicroelectronics |
High voltage fast-switching PNP power transistor ■ ■ High voltage capability Applications ■ ■ Lighting Switch mode power supply Description This device is a high voltage fast-switching PNP power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switc |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS STN1NK80Z STQ1NK80ZR-AP 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 16 Ω ID 250 mA Applications • Switching applications Description These high-voltage |
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STMicroelectronics |
PFC and time-shift LLC resonant controller • Digital combo multi-mode PFC + time-shift LLC resonant half-bridge controller • Onboard 800 V startup circuit, line sense and X-cap discharge compliant with IEC 62368-1, for reduced standby power • Enhanced fixed on time multi-mode TM PFC controlle |
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STMicroelectronics |
N-CHANNEL MOSFET Type STN3NF06 VDSS (@Tjmax) 60V RDS(on) <0.1Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ID 4A Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" |
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ST Microelectronics |
High voltage fast-switching PNP power transistor ■ ■ ■ ■ ■ Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed SOT-223 plastic package for surface mounting circuits Tape and reel packing 1 2 2 3 ■ SOT-223 Applica |
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ELAN Microelectronics |
68COM/98SEG 65K Color STN LCD Drivers ....................................................................................................................... 1 Applications............................................................................................................... 2 Pi |
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STMicroelectronics |
N-CHANNEL MOSFET Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s D |
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STMicroelectronics |
PFC and time-shift LLC resonant controller Product status link STNRG011A Product summary Order code STNRG011A STNRG011ATR Package SO20 Packing Tube Tape & Reel • Digital combo multi-mode PFC + time-shift LLC resonant half-bridge controller • Onboard 800 V startup circuit, line sense |
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STMicroelectronics |
Digital controller Up to 6 programmable PWM generators (SMED - “State Machine Event Driven”) – 10 ns event detection and reaction – Max.1.3 ns PWM resolution – Single, coupled and two coupled operational modes – Up to 3 internal/external events per SMED 4 analog co |
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ST Microelectronics |
(STN8810 - STN8812) Trio of Nomadik application processors bring multimedia to next-generation mobile devices ■ ■ ■ ■ ■ ■ ■ ■ ■ Smart video accelerator ● Real-time encoding or decoding up to VGA 30 fps ● Megapixel JPEG encode/decode ● Ultra low-power implementation Smart audio accelerator ● Extensive digital-audio software library ● Ultra low-power imp |
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ST Microelectronics |
(2STF1360 / 2STN1360) LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ LED ■ Voltage regulation ■ Relay drive Description This device is an NPN transistor manufactured using new l |
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ST Microelectronics |
N-CHANNEL POWER MOSFET C o o C C ( •) Pulse width limited by safe operating area (*) Limited by package March 1996 1/5 STN2N06 THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum |
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ST Microelectronics |
N-CHANNEL POWER MOSFET o C o o C C ( •) Pulse width limited by safe operating area (*) Limited by package March 1996 1/5 STN2N10L THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Max |
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ST Microelectronics |
N-CHANNEL POWER MOSFET Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. www.DataSheet4U. |
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ST Microelectronics |
N-Channel Power MOSFET Type VDSS (@Tjmax) RDS(on) ID 2 STN2NE10L 100V <0.4Ω 1.8A 3 ■ Exceptional dv/dt capability 2 1 ■ Avalanche rugged technology SOT-223 ■ 100% avalanche tested ) ■ Low threshold drive ct(s Description du This Power MOSFET is the latest d |
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ELAN Microelectronics |
65 COM/ 132 SEG STN LCD Driver ..................................................................................................................... 1 Pin Configuration ...................................................................................................... 3 3.1 4 5 |
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ELAN Microelectronics |
66 COM/ 96 SEG 256 Color STN LCD Driver ...........................................................................................................................................................................4 APPLICATIONS ................................................................ |
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STMicroelectronics |
P-Channel MOSFET Type STN3PF06 VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A ■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Application ■ Switching applications Description This Power MOSFET is the latest development of |
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STMicroelectronics |
N-CHANNEL MOSFET 4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0.3 A 3W • 100% avalanche tested • Extremely high dv/dt capability • |
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STMicroelectronics |
Low voltage fast-switching NPN power bipolar transistors ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting devices in medium power SOT-89 and SOT-223 packages In compliance with the 2002/93/EC European Directive 2 2 3 ■ 1 SOT-8 |
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Desde 2024. D4U Semiconductor.
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