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STN2NE10 |
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| Part Number | STN2NE10 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance... |
| Features |
Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 2 1.3 8 2.5 0.02 6 -65 to 150 150
(1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C
( •) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 January 1999 1/5 STN2NE10 THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Max ... |
| Document |
 STN2NE10 Data Sheet
PDF 73.31KB |
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Desde 2024. D4U Semiconductor.
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