| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
2u/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS e STKM2000 series, SGS-THOMSON Microelectronics introduces the “state of the art” product for analog signal processing, chain from sensor to actuator. The introduction of new concepts (cells library and CAD) opens the design of analog functions and m |
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STMicroelectronics |
(STK12N05L / STK12N06L) N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR s) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value STK12N06L 60 60 ± 15 12 8 48 50 0.33 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C |
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ST Microelectronics |
STK2N50 |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-S |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Sourc |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage G |
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ST Microelectronics |
N-Channel Transistor Max. Operating Junction Temperature o o Value 50 50 ± 20 22 15 88 65 0.43 -65 to 175 175 Unit V V V A A A W W/o C o o C C ( •) Pulse width limited by safe operating area December 1996 1/10 STK22N05 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb |
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ST Microelectronics |
N-Channel Transistor . Operating Junction Temperature o o Value 60 60 ± 20 22 15 88 65 0.43 -65 to 175 175 Unit V V V A A A W W/o C o o C C ( •) Pulse width limited by safe operating area May 1993 1/7 STK22N06 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal |
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STMicroelectronics |
(STK12N05L / STK12N06L) N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR s) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value STK12N06L 60 60 ± 15 12 8 48 50 0.33 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C |
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STMicroelectronics |
N-channel Power MOSFET Type STK28N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.0045 Ω RDS(on)*Qg 68.4 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charg |
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STMicroelectronics |
N-channel Power MOSFET Type STK20N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.007 Ω RDS(on)*Qg 68 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge F |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STK13003 is reverse pin out versus standard SOT-82 package ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-S |
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STMicroelectronics |
Automotive N-channel MOSFET Order code STK130N4LF7AG V DS 40 V RDS(on) max. 3.0 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching app |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR limited by safe operating area December 1996 1/10 STK2N80 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purp |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR tage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature |
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ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor |
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ST Microelectronics |
N-channel Power MOSFET Type STK800 ■ VDSS 30V RDS(on) <0.0078 Ω RDS(on)*Qg 80.4nC*mΩ PTOT 5.2W Ultra low top and bottom junction to case thermal resistance Very low capacitances 100% Rg tested Fully incapsulated die In compliance with the 2002/95/EC european directive |
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ST Microelectronics |
STK2N50 |
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STMicroelectronics |
N-channel Power MOSFET Type STK24N4LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 40 V RDS(on) max < 0.0055 Ω RDS(on)*Qg 96 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge |
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Desde 2024. D4U Semiconductor.
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