STK130N4LF7AG |
Part Number | STK130N4LF7AG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance a... |
Features |
Order code STK130N4LF7AG
V DS 40 V
RDS(on) max. 3.0 mΩ
• AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications ID 100 A G(4) Description S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G4S123DTAB_LFPAK Product status link STK130N4LF7AG P... |
Document |
STK130N4LF7AG Data Sheet
PDF 229.83KB |
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