ST Microelectronics STG Hoja de datos

No.	parte #	Fabricante	Descripción
1	GW20NC60VD	STMicroelectronics	STGW20NC60VD ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and
2	GW45HF60WD	ST Microelectronics	STGW45HF60WD ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ Welding High frequency converters Power factor correction TO-247 1 Descript
3	STGW60V60F	STMicroelectronics	Trench gate field-stop IGBT  Maximum junction temperature: TJ = 175 °C  Tail-less switching off  VCE(sat) = 1.85 V (typ.) @ IC = 60 A  Tight parameters distribution  Safe paralleling  Low thermal resistance Applications  Photovoltaic inverters  Uninterruptible power sup
4	STGP8NC60KD	ST Microelectronics	short circuit rugged IGBT • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and
5	STGW38IH130D	ST Microelectronics	IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 2 1 3 Applications ■ ■ Induction cooking, microwave oven Soft switching application TO-247 Description This IGB
6	STGIF5CH60TS-E	STMicroelectronics	IGBT • IPM 8 A, 600 V, 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Undervoltage lockout of gate drivers • Smart shutdown function •
7	STGW30V60DF	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo
8	STGP35HF60W	STMicroelectronics	35A 600V Ultrafast IGBT ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications ■ Welding ■ High frequency converters ■ Power factor correction Description This Ultrafast IGBT is developed using a new planar technology to yield a
9	STGD6M65DF2	STMicroelectronics	IGBT • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal res
10	GW20NB60HD	STMicroelectronics	STGW20NB60HD -Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value
11	STG3159	STMicroelectronics	single SPDT switch ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 1.0Ω (TA = 25ºC) at VCC = 4.3V – RON = 1.1Ω (TA = 25ºC) at VCC = 3.0V – R
12	STGWA40HP65FB2	STMicroelectronics	high-speed HB2 series IGBT • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applica
13	STGWT40HP65FB	STMicroelectronics	IGBT  Maximum junction temperature: TJ = 175 °C  Minimized tail current  VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Co-packed diode for protection  Safe paralleling  Low thermal resistance Applications  Power factor correct
14	STGWT15H60F	STMicroelectronics	Trench gate field-stop IGBT  High speed switching  Tight parameter distribution  Safe paralleling  Low thermal resistance  Short-circuit rated Applications  Motor control  UPS  PFC C(2, TAB) G(1) E(3) Order code STGWT15H60F Description This device is an IGBT developed
15	STG3689	STMicroelectronics	dual SPDT Switch ■ Low quiescent supply current: – Max ± 50µA for V1IN, V2IN = 1.80V at VCC = 4.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C, VIN = 0V Switch S1: Low “ON” resistance VIN = 0V: – RON = 0.7Ω (Max. TA =25°C) at VCC = 4.3V – RON = 0.
16	STGWT38IH130D	STMicroelectronics	very fast IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Desc
17	STGIPN3H60	STMicroelectronics	3-phase inverter bridge IGBT • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes • Optimized for low electromagnetic interferences • VCE(sat) negative temperature coefficient • 3.3 V, 5 V, 15 V CMOS/TTL input comparators
18	STGWA25H120F2	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low
19	STGW25H120DF2	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fas
20	STGIB15CH60TS-L	STMicroelectronics	short-circuit rugged IGBT • IPM 20 A, 600 V, 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Undervoltage lockout of gate drivers • Smart shutdown function