ST Microelectronics P20 Hoja de datos

No.	parte #	Fabricante	Descripción
1	KBP208G	Sangdest Microelectronics	SINGLE PHASE 2.0AMP GLASS PASSIVATED BRIDGE RECTIFIER  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional
2	P20NM60	ST Microelectronics	N-CHANNEL POWER MOSFET Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitan
3	P20NM60FP	ST Microelectronics	N-CHANNEL POWER MOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 20 A 20 A TO-220 TO-220FP VDSS 600 V 600 V 600 V 600 V 600 V 3 1 2 3 1 2 s TYPICAL RDS(o
4	STP20N65M5	STMicroelectronics	N-channel Power MOSFET Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Appli
5	KBP204G	Sangdest Microelectronics	SINGLE PHASE 2.0AMP GLASS PASSIVATED BRIDGE RECTIFIER  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional
6	VNP20N07FI	STMicroelectronics	FULLY AUTOPROTECTED POWER MOSFET
7	P20NM50	ST Microelectronics	N-CHANNEL POWER MOSFET Type VDSS RDS(on) max RDS(on)* Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A 20 A 20 A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input
8	P20NE	STMicroelectronics	STP20NE Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s H
9	STP20N95K5	STMicroelectronics	N-channel Power MOSFET Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5 VDS 950 V RDS(on) max. 0.330 Ω ID 17.5 A PTOT 250 W 40 W 250 W  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Z
10	STP200N3LL	STMicroelectronics	N-CHANNEL POWER MOSFET Order code VDS STP200N3LL 30 V RDS(on) max. 2.4 mΩ ID 120 A PTOT 176.5 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N
11	CLP200M	STMicroelectronics	OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE DUAL BIDIRECTIONAL PROTECTION DEVICE. HIGH PEAK PULSE CURRENT : Ipp = 100A (10/1000 µs SURGE) MAX. VOLTAGE AT SWITCHING-ON : 290V MIN. CURRENT AT SWITCHING-OFF : 150mA FAILURE STATUS OUTPUT PIN BENEFITS Both primary and secondary protection levels in
12	BYW51FP200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio
13	VNP20N07	STMicroelectronics	FULLY AUTOPROTECTED POWER MOSFET
14	KBP201G	Sangdest Microelectronics	SINGLE PHASE 2.0AMP GLASS PASSIVATED BRIDGE RECTIFIER  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional
15	KBP202G	Sangdest Microelectronics	SINGLE PHASE 2.0AMP GLASS PASSIVATED BRIDGE RECTIFIER  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional
16	KBP206G	Sangdest Microelectronics	SINGLE PHASE 2.0AMP GLASS PASSIVATED BRIDGE RECTIFIER  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional
17	TLP200G-1	STMicroelectronics	TRIPOLAR OVERVOLTAGE PROTECTION TRIPOLAR CROWBAR PROTECTION TIP TAB GND RING VOLTAGE RANGE SELECTED TELECOM APPLICATIONS REPETITIVE PEAK PULSE CURRENT : IPP = 100 A (10 / 1000 µs) HOLDING CURRENT : IH = 150 mA LOW CAPACITANCE : C = 110 pF typ. FOR D2PAK TLPxxG LOW LEAKAGE CU
18	TLP200M	STMicroelectronics	TRIPOLAR OVERVOLTAGE PROTECTION TRIPOLAR CROWBAR PROTECTION TIP TAB GND RING VOLTAGE RANGE SELECTED TELECOM APPLICATIONS REPETITIVE PEAK PULSE CURRENT : IPP = 100 A (10 / 1000 µs) HOLDING CURRENT : IH = 150 mA LOW CAPACITANCE : C = 110 pF typ. FOR D2PAK TLPxxG LOW LEAKAGE CU
19	STP20N10L	ST Microelectronics	N-CHANNEL POWER MOSFET oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP20N10LFI 100 100 ± 15 20 14 80 105 0.7  -65 to 175 175 12 8 80 40 0.27 2
20	STP20N10LFI	ST Microelectronics	N-CHANNEL POWER MOSFET oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP20N10LFI 100 100 ± 15 20 14 80 105 0.7  -65 to 175 175 12 8 80 40 0.27 2