logo

STP20N10L ST Microelectronics N-CHANNEL POWER MOSFET Datasheet

STP20N10L MOSFET Transistor, N-Channel, TO-220


ST Microelectronics
STP20N10L
Part Number STP20N10L
Manufacturer STMicroelectronics (https://www.st.com/)
Description STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI s s s s s s s s s V DSS 100 V 100 V R DS( on) < 0.12 Ω < 0.12 Ω ID 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 10...
Features oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP20N10LFI 100 100 ± 15 20 14 80 105 0.7  -65 to 175 175 12 8 80 40 0.27 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area November 1996 1/10 STP20N10L/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.43 62.5 0.5 300 ISOWATT220 3.75 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ...

Document Datasheet STP20N10L datasheet pdf (203.31KB)
Distributor Distributor
Quest Components
Stock 1 In stock
Price
1 units: 4.68 USD
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)


Similar Datasheet

Part Number Description
STP20N10
manufacturer
ST Microelectronics
N-CHANNEL POWER MOSFET
STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N10 s s s s s s s s V DSS 100 V R DS( on) < 0.12 Ω ID 20 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( •) P tot T stg Tj Param...
STP20N10L
manufacturer
INCHANGE
N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±15 20 14 80 PD Total Dissipation 105 Tj Operating Junction Temperature -65~175 Tstg Storage Temperature -65~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-...
STP20N10LFI
manufacturer
ST Microelectronics
N-CHANNEL POWER MOSFET
STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI s s s s s s s s s V DSS 100 V 100 V R DS( on) < 0.12 Ω < 0.12 Ω ID 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE LOGIC LEVEL COMPATIBLE INPUT APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s IN...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy