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STMicroelectronics |
N-CHANNEL Power MOSFET Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z s s s s s s Package RDS(on) <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156 VDSS 600 600 600 600 600 V V V V V 3 1 2 1 2 3 3 2 1 TO-220 TO |
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STMicroelectronics |
N-channel MOSFET TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% * Applicatio |
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STMicroelectronics |
M25P10 of the device are summarized in Table 3. Figure 4. Hold Condition Activation CLOCK HOLD PIN MEMORY STATUS ACTIVE HOLD ACTIVE HOLD ACTIVE AI02029B 3/21 M25P10 Figure 5. M25P10-Compatible SPI Modes CPOL CPHA 00 C 11 C D or Q MSB LSB AI |
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STMicroelectronics |
short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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STMicroelectronics |
1 Mbit Low Voltage Paged Flash Memory of the device are summarized in Table 3. Figure 4. Hold Condition Activation CLOCK HOLD PIN MEMORY STATUS ACTIVE HOLD ACTIVE HOLD ACTIVE AI02029B 3/21 M25P10 Figure 5. M25P10-Compatible SPI Modes CPOL CPHA 00 C 11 C D or Q MSB LSB AI |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STB10NK60Z-1 STB10NK60ZT4 STP10NK60Z STP10NK60ZFP STW10NK60Z ■ ■ ■ ■ TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max ID Pw TAB 3 12 1 2 3 < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 35 W < 0.75 Ω 10 A 156 W |
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ST Microelectronics |
M25P10AV ■ 1 Mbit of Flash memory www.DataSheet4U.com ■ Page Program (up to 256 bytes) in 1.4 ms (typical) ■ ■ ■ ■ ■ ■ ■ Sector Erase (256 Kbit) in 0.65 s (typical) Bulk Erase (1 Mbit) in 1.7 s (typical) 2.3 to 3.6 V single supply voltage SPI bus compatibl |
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STMicroelectronics |
N-CHANNEL Zener-Protected SuperMESH MOSFET TYPE STP10NK50Z STF10NK50Z ■ ■ ■ ■ ■ ■ STP10NK50Z STF10NK50Z Figure 1: Package ID 9A 9 A(*) Pw 125 W 30 W VDSS 500 V 500 V RDS(on) < 0.7 Ω < 0.7 Ω TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZ |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1 Industry’s lowest RDS(on) Industry’s best figure |
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STMicroelectronics |
1 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface SUMMARY s 1 Mbit of Flash Memory s Figure 1. Packages Page Program (up to 256 Bytes) in 1.5ms (typical) Sector Erase (256 Kbit) in 2 s (typical) Bulk Erase (1 Mbit) in 3 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial Int |
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ST Microelectronics |
N-CHANNEL Power MOSFET TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) <0.90Ω <0.90Ω <0.90Ω ID 9A 9A 9A Pw 160 W 40 W 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z ■ ■ ■ ■ ■ Package RDS(on) <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156 VDSS 600 600 600 600 600 V V V V V 3 1 2 1 2 3 3 2 1 TO-220 TO-2 |
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ST Microelectronics |
N-channel Power MOSFET Type STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 ■ ■ ■ VDSS 30V 30V 30V RDS(on) <0.0032Ω <0.0032Ω <0.0032Ω ID 100A 100A 100A TO-220 1 2 3 3 1 D2PAK Low threshold drive 100% avalanche tested Logic level device 3 12 Description This Power MO |
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ST Microelectronics |
N-CHANNEL IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ |
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STMicroelectronics |
STP10NK60ZFP |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STP100N8F6 80 V RDS(on)max. 0.009 Ω ID 100 A PTOT 176 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-c |
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STMicroelectronics |
1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface of the device are summarized in Table 3. Figure 4. Hold Condition Activation CLOCK HOLD PIN MEMORY STATUS ACTIVE HOLD ACTIVE HOLD ACTIVE AI02029B 3/21 M25P10 Figure 5. M25P10-Compatible SPI Modes CPOL CPHA 0 0 C 1 1 C D or Q MSB |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS o 150 150 Value TIP102 TIP107 100 100 V V V A A A W W o o Un it C C * For PNP types voltage and current values are negative. October 1999 1/4 TIP102 / TIP105 / TIP107 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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