Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
TIP102 |
| Part Number | TIP102 |
| Manufacturer | Central Semiconductor |
| Title | Silicon Power darlington Complementary transistors |
| Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . |
| Features | . |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | TAITRON |
| Title | Darlington NPN Power Transistors |
| Description | TIP100 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Collector Current Continuous ICM Collector Current Peak IB Base Current Power Dissipation upto TC=25°C PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA T. |
| Features |
• Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP100 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Em. |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A ·Complement to Type TIP107 ·Minimum Lot-to-Lot variations for robust device performance and re. |
| Features | Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W TIP102 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Satur. |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | Power Innovations Limited |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with TIP105, TIP106 and TIP107 80 W at 25°C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A. |
| Features | ase for 10 seconds NOTES: 1. 2. 3. 4. TIP101 TIP102 V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 8 15 1 80 2 10 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of. |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | SemiHow |
| Title | NPN Epitaxial Silicon Transistor |
| Description | TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - In. |
| Features | . |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | MCC |
| Title | NPN Plastic Medium-Power Silicon Transistors |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=25. |
| Features |
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compact package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings Symbol Param. |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Darlington Transistor |
| Description | TIP102 — NPN Epitaxial Silicon Darlington Transistor December 2014 TIP102 NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) • Collector-Emitter Sustaining Vol. |
| Features |
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP107 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP102 TIP102TU Top Mark. |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | Motorola |
| Title | DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining V. |
| Features | ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ. |
TIP102 |
| Part Number | TIP102 |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER TRANSISTORS |
| Description | Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Operating And Storage Junction Temperature VEBO IC ICM IB PD PD Tj , . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP100 |
SemiHow |
NPN Epitaxial Silicon Transistor |
|
| 2 | TIP100 |
TAITRON |
Darlington NPN Power Transistors |
|
| 3 | TIP100 |
Motorola |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 4 | TIP100 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|
| 5 | TIP100 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Darlington Transistor |
|
| 6 | TIP100 |
CDIL |
NPN PLASTIC POWER TRANSISTORS |
|
| 7 | TIP100 |
MCC |
NPN Plastic Medium-Power Silicon Transistors |
|
| 8 | TIP100 |
ON Semiconductor |
Silicon NPN Transistor |
|
| 9 | TIP100 |
Comset Semiconductors |
(TIP100 - TIP102) Silicon NPN Darlington Power Transistors |
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| 10 | TIP100 |
INCHANGE |
NPN Transistor |
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Desde 2024. D4U Semiconductor.
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