ST Microelectronics H12 Hoja de datos

No.	parte #	Fabricante	Descripción
1	STTH120L04TV1	ST Microelectronics	Ultrafast High Voltage Rectifier and benefits ● ● ● ● ● Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Package insulation voltage: 2500 VRMS Description The STTH120L04TV1 uses ST 400 V technology and is specially suited for u
2	LIS2DH12	STMicroelectronics	MEMS digital output motion sensor  Wide supply voltage, 1.71 V to 3.6 V  Independent IO supply (1.8 V) and supply voltage compatible  Ultra-low power consumption down to 2 μA  2g/±4g/8g/16g selectable full scales  I2C/SPI digital output interface  2 independent programmable
3	STGWA25H120F2	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low
4	STGW25H120DF2	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fas
5	H12N60	ST Microelectronics	STH12N60
6	STTH12012TV	STMicroelectronics	Ultrafast recovery - 1200 V diode and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: Electrical insulation = 2500
7	STTH12R06D	STMicroelectronics	TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER AND BENEFITS s Ultrafast switching s Low reverse recovery current s Reduces switching losses s Low thermal resistance DESCRIPTION The STTH12R06D/FP, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode pow
8	STGWA25H120DF2	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fas
9	STPSC20H12	STMicroelectronics	power Schottky silicon carbide diode • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant component Applications • Solar inverter • Boost PFC • Air conditioning equ
10	STPSC10H12	STMicroelectronics	power Schottky silicon carbide diode • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating from -40 °C to 175 °C • Low VF • ECOPACK®2 compliant Description The SiC diode, available in TO-220AC, DPAK HV, D²PAK and
11	STPSC15H12-Y	STMicroelectronics	Automotive grade 1200V power Schottky silicon carbide diode
12	BUH1215	ST Microelectronics	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1/7 January 1999 BUH1215 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Paramete
13	MK45H12	ST Microelectronics	VERY FAST CMOS 512/1K/2K x9BiPORT FIFO
14	STH12NA60	ST Microelectronics	N-CHANNEL Power MOS MOSFET TW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (p
15	H12N60FI	ST Microelectronics	STH12N60FI
16	STRH12P10ESY3	ST Microelectronics	Power MOSFET Type STRH12P10ESY3 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ www.DataSheet4U.com VDSS 100V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Hea
17	STTH1210	STMicroelectronics	Ultrafast recovery - high voltage diode and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated packages: – TO-220Ins Electrical insul
18	STTH12R06FP	STMicroelectronics	TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER AND BENEFITS s Ultrafast switching s Low reverse recovery current s Reduces switching losses s Low thermal resistance DESCRIPTION The STTH12R06D/FP, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode pow
19	H12NA60	STMicroelectronics	STH12NA60 te-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temper
20	STH12N120K5-2	STMicroelectronics	N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. ID PTOT STH12N120K5-2 STP12N120K5 1200 V STW12N120K5 0.69 Ω 12 A 250 W STWA12N120K5 TO-247 3 2 1 3 2 1 TO-247 long leads Figure 1: Internal schematic diagram D(TAB) D(2, TAB) G(1) G(1) S(2, 3) (H 2PAK-2)