No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR A W o o C C January 2000 1/4 BUV20 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = |
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STMicroelectronics |
SILICON NPN SWITCHING TRANSISTOR CS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 400V T c = 125 C V CE = 400V VBE = -1.5V T c |
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ST Microelectronics |
NPN High Current Switching Transistors |
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STMicroelectronics |
MEDIUM POWER NPN SILICON TRANSISTOR |
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ST Microelectronics |
SILICON NPN SWITCHING TRANSISTOR R BE = 10 Ω) Collector Cut-off Current Emitter Cut- off Current (I C = 0) T est Con ditio ns V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = 2A 4A 6A 2A |
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STMicroelectronics |
High voltage fast switching NPN power transistor ■ High current capability ■ Fast switching speed Applications ■ Switching mode power supplies ■ Flyback and forward single transistor low power converter Description The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTORS BE = 10 Ω ) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Collector Peak Current non repetitive (t p <20 µ s) Base Current Base Peak Current Total Dis |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ) TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1 |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR L DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current (V BE = -1.5V) Em |
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ST Microelectronics |
NPN High Current Switching Transistors |
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ST Microelectronics |
NPN Transistor Power-Module |
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STMicroelectronics |
MEDIUM POWER NPN SILICON TRANSISTOR unction-case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Condition |
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STMicroelectronics |
NPN TRANSISTOR POWER MODULE |
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STMicroelectronics |
NPN TRANSISTOR POWER MODULE ■ NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ) ■ Specific accidental overload areas t(s ■ Fully insulated package (U.L. compliant) for ceasy mounting du ■ Low internal parasitic inductance ro ■ In compliance with t |
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STMicroelectronics |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 10 |
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STMicroelectronics |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 10 |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ) TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1 |
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STMicroelectronics |
NPN TRANSISTOR POWER-MODULE |
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STMicroelectronics |
NPN Transistor Power-Module With Conductive Grease Applied o Max Max 0.83 0.05 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol I CER ICEV I EBO Parameter Collecto r Cut-of f Current (RBE = 5 Ω ) Collecto r Cut-of f Current (VBE = -5 |
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