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STMicroelectronics |
N-CHANNEL Power MOSFET 300 2 9 360 – 55 to 175 (1) I SD ≤80A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25°C, I D = 80A, VDD = 50V Unit V V V 38 27 152 45 0.3 A A A W W/°C V/ns mJ 2500 V °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 2 |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF55-08T4 STP80NF55-08 STW80NF55-08 VDSS 55 V 55 V 55 V ■ Standard threshold drive RDS(on) max < 0.008 Ω < 0.008 Ω < 0.008 Ω ID 80 A 80 A 80 A Application ■ Switching applications Description This Power MOSFET is the latest developme |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP80N70F6 VDSS max. 68 V RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W (VGS= 10 V) ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF55-06T VDSS 55 V RDS(on) max. 6.5 mΩ ID 80 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications Description This Power MOSFET series has been developed u |
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STMicroelectronics |
N-CHANNEL Power MOSFET Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEM |
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STMicroelectronics |
STP80NF75L Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HI |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STP80NF70 VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A ■ Exceptional dv/dt capability ■ 100% avalanche tested Application ■ Switching applications Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique S |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP VDSS 55V 55V 55V 55V RDS(on) <0.0065Ω <0.0065Ω <0.0065Ω <0.0065Ω ID 80A (1) 80A(1) 80A (1) 60A (1) 1. Limited by package ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Appli |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STP80NF10 STB80NF10 VDSS 100 V 100 V RDS(on) max < 0.015 Ω < 0.015 Ω ■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization ID 80 A 80 A Applications ■ Switching applications Description This Power |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type STP80NF12 VDSS 120 V RDS(on) max < 0.018 Ω ID 80 A • Exceptional dv/dt capability • 100% avalanche tested • Application oriented characterization Application • Switching applications Figure 1. Internal schematic diagram ' 7$% * De |
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ST Microelectronics |
N-CHANNEL POWER MOSFET e Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate SourceCurrent (continuous) Drain Current (pulsed) Total Dissipation at T |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP VDSS 55V 55V 55V 55V RDS(on) <0.0065Ω <0.0065Ω <0.0065Ω <0.0065Ω ID 80A (1) 80A(1) 80A (1) 60A (1) 1. Limited by package ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Appli |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF06 STP80NF06 STW80NF06 VDSS 60V 60V 60V ■ 100% avalanche tested ■ Low threshold drive RDS(on) <0.008Ω <0.008Ω <0.008Ω ID 80A 80A 80A Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Featur |
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STMicroelectronics |
N-Channel Power MOSFET Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W • Extremely low gate charge • Ultra low on-resistance • Low gate input resistan |
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STMicroelectronics |
STB80NF55-06 Type STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP 1. Limited by package ■ ■ ■ VDSS 55V 55V 55V 55V RDS(on) <0.0065Ω ID 80A(1) TO-220 3 1 2 1 3 2 <0.0065Ω 80A (1) <0.0065Ω 80A (1) <0.0065Ω 60A (1) TO-220FP Exceptional dv/dt capability |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF55-08T4 STP80NF55-08 STW80NF55-08 ■ VDSS 55 V 55 V 55 V RDS(on) max < 0.008 Ω < 0.008 Ω < 0.008 Ω ID 80 A 80 A 80 A 1 1 2 3 3 2 TO-247 TO-220 Standard threshold drive 3 1 Application ■ Switching applications D²PAK Description |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP80N70F4 VDSS 68 V RDS(on) max < 9.8 mΩ ID 85 A ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description This device is an N-channel Power MOSFE |
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STMicroelectronics |
N-channel Power MOSFET Order code STB80N4F6AG VDS 40 V RDS(on) max. 6 mΩ ID 80 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switchi |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF06 STP80NF06 STW80NF06 VDSS 60V 60V 60V ■ 100% avalanche tested ■ Low threshold drive RDS(on) <0.008Ω <0.008Ω <0.008Ω ID 80A 80A 80A Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Featur |
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Sangdest Microelectronics |
SCHOTTKY RECTIFIER 150℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance |
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Desde 2024. D4U Semiconductor.
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