Busque con el número de pieza junto con el fabricante o la descripción
STP80N10F7 |
Click to view a larger image
| Part Number | STP80N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ... |
| Features |
Order codes
VDS @ RDS(on) TJmax max
STD80N10F7
0.01 Ω
STF80N10F7
0.01 Ω
100 V
STH80N10F7-2
0.0095 Ω
STP80N10F7
0.01 Ω
ID 70 A 40 A
80 A
PTOT 85 W 30 W
110 W
• Extremely low gate charge • Ultra low on-resistance • Low gate input resistance Figure 1. Internal schematic diagram ' 7$% ' 7$% * 6 * 6 Applications • Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72D... |
| Document |
 STP80N10F7 Data Sheet
PDF 695.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 3 | STP80N03L-06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 4 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 5 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
|
| 6 | STP80N20M5 |
ST Microelectronics |
Power MOSFET |
|
| 7 | STP80N240K6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 8 | STP80N340K6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 9 | STP80N450K6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 10 | STP80N600K6 |
STMicroelectronics |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|