SP 4S5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	VDR-34S511K	HUAAN	Special Shape Metal Oxide Varistor ·Wide operating voltage (V1mA) range from 200V to 1800V ·Fast responding to transient over-voltage ·Large absorbing transient energy capability ·Low clamping ratio and no follow-on current ·Meets MSL level 1, per J-STD-020 ·Operating Temperature：-40℃
2	K4S510432B-TCL75	Samsung semiconductor	512Mb B-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are s
3	K4S510832B-TC75	Samsung semiconductor	512Mb B-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are s
4	K4S510832B-TCL75	Samsung semiconductor	512Mb B-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are s
5	K4S561632J	Samsung semiconductor	256Mb J-die SDRAM Specification ....................................................................................................................................... 4 2.0 General Description ........................................................................................
6	VDR-34S561K	HUAAN	Special Shape Metal Oxide Varistor ·Wide operating voltage (V1mA) range from 200V to 1800V ·Fast responding to transient over-voltage ·Large absorbing transient energy capability ·Low clamping ratio and no follow-on current ·Meets MSL level 1, per J-STD-020 ·Operating Temperature：-40℃
7	K4S510432B-TC	Samsung semiconductor	512Mb B-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are s
8	K4S510432B-TC75	Samsung semiconductor	512Mb B-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are s
9	K4S511632B-TC75	Samsung semiconductor	512Mb B-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are s
10	K4S511632B-TCL75	Samsung semiconductor	512Mb B-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are s
11	K4S560432E-TC75	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
12	K4S560432E-TL75	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
13	K4S560832E-TC75	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
14	K4S560832E-TL75	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
15	K4S561632E-TC60	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
16	K4S561632E-TC75	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
17	K4S561632E-TL60	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
18	K4S561632E-TL75	Samsung semiconductor	256Mb E-die SDRAM Specification • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
19	K4S561633C-N	Samsung semiconductor	16Mx16 SDRAM 54CSP • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). •
20	K4S561633C-P1H	Samsung semiconductor	16Mx16 SDRAM 54CSP • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). •