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K4S561633C-P1H |
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| Part Number | K4S561633C-P1H |
| Manufacturer | Samsung semiconductor |
| Description | The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design al... |
| Features |
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • DQM for masking • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25° C ~ 70 °C). Extended Temperature Operation ( -25° C ~ 85 °C). Inderstrial Temperature Operation ( -40° C ~ 85° C). • 54balls CSP ... |
| Document |
 K4S561633C-P1H Data Sheet
PDF 59.53KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S561633C-P1L |
Samsung semiconductor |
16Mx16 SDRAM 54CSP |
|
| 2 | K4S561633C-P75 |
Samsung semiconductor |
16Mx16 SDRAM 54CSP |
|
| 3 | K4S561633C-N |
Samsung semiconductor |
16Mx16 SDRAM 54CSP |
|
| 4 | K4S561633C-RBL |
Samsung semiconductor |
16Mx16 SDRAM 54CSP |
|
| 5 | K4S561633C-RL |
Samsung semiconductor |
16Mx16 SDRAM 54CSP |
|
| 6 | K4S561633F |
Samsung semiconductor |
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
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Desde 2024. D4U Semiconductor.
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