| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Des |
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Silikron |
MOSFET ● VDS = 30V,ID =55A RDS(ON) < 9.5mΩ @ VGS=4.5V RDS(ON) < 5.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●PWM applica |
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Silikron Semiconductor |
MOSFET and Benefits: D2PAK Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating |
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Silikron Semiconductor |
MOSFET and Benefits: TO-220 SSFT4003 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operatin |
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Silikron Semiconductor Co |
MOSFET ge Operating Junction and Storage Temperature Range Max. 84 76 310 150 1.5 ±20 400 20 30 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakd |
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Silikron Semiconductor |
MOSFET ion-to-case Junction-to-ambient — — Max. 160 100 640 150 2.0 ±20 480 TBD 31 –55 to +150 Typ. Max. 0.83 — — 62 Units A W W/ْ C V mJ mJ v/ns ْC Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. U |
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Silikron |
MOSFET and Benefits: TO-263-7L Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temp |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSF |
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Silikron |
MOSFET and Benefits Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150°C operating temperature Description It utilizes the latest trench processing techniques to achieve the high cell |
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Silikron Semiconductor Co |
N-Channel MOSFET age Temperature Range 80 70 320 192 2.0 ±20 460 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018D TOP View (TO220) Max. Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdow |
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Silikron Semiconductor Co |
Power switching application Max. 110 80 400 150 2.0 ±20 31 ② 480 TBD –55 to +150 Units A W W/ْ C V v/ns mJ Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recov |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSF |
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Silikron Semiconductor |
MOSFET and Benefits: Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175℃ operating temperature High Avalanche capability and 100% tested TO220 Marking and pin Assignment Schema |
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Silikron Semiconductor Co |
N-Channel MOSFET — — Min. — — Typ. — 7.2 Typ. 1.03 — Max. Units — 10 4.0 — 2 10 100 -100 μA V V S Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source vol |
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Silikron |
low gate charge and operation ● VDS = 20V,ID = 6A RDS(ON) < 37.5mΩ @ VGS=2.5V RDS(ON) < 27.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 S1 S1 G1 Schematic diagram 4 3 2 1 5 6 7 8 D2 S2 S2 G2 8205A Mark |
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SILIKRON |
N-Channel MOSFET and Benefits: TO-252 (DPAK) High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance SSF5NS65UD Marking and pin Assignment Schematic diagram Description: The SSF5NS65UD |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SS |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSF |
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Silikron |
MOSFET and Benefits SOT-23 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperat |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSF |
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Desde 2024. D4U Semiconductor.
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