SSF6008 |
Part Number | SSF6008 |
Manufacturer | SilikrON Semiconductor (https://www.onsemi.com/) Co |
Description | The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatabi... |
Features |
ge Operating Junction and Storage Temperature Range Max. 84 76 310 150 1.5 ±20 400 20 30 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 60 — 2.0 — — — — 2009.7.10 Typ. — 5.5 — — — — — Max. Units — 8 4.0 2 10 100 -100 V V Test Conditions VGS=0V,ID=250μA VDS=VGS,ID=250μA VDS=60V,VGS=0V mΩ VGS=10V,ID=30A ... |
Document |
SSF6008 Data Sheet
PDF 357.26KB |
Similar Datasheet
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---|---|---|---|---|
1 | SSF6005 |
GOOD-ARK |
N-Channel MOSFET | |
2 | SSF6005 |
Silikron Semiconductor |
MOSFET | |
3 | SSF6007 |
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4 | SSF6007 |
GOOD-ARK |
P-Channel MOSFET | |
5 | SSF6008 |
GOOD-ARK |
N-Channel MOSFET | |
6 | SSF6010 |
Silikron Semiconductor Co |
Power switching application |