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SEMTECH ELECTRONICS |
PNP Silicon Transistor A Noise Figure at -VCE=6V, -IC=0.1mA, RG=10kΩ, f=10Hz Output Capacitance at -VCB=10V, f=1MHz Base Emitter Voltage at -VCE=6V,-IC=2mA Collector Cutoff Current at -VCB=120V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=10mA, -IB |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor O C C at VCE=6V, IC=150mA Collector Saturation Voltage at IC=100mA, IB=10mA Base Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V at VEB=5V Gain Bandwidth Product at VCE=10V, IC=1mA Output Capacitance at VCB=10V, f=1MHz |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor mA, VCE=10V at IC=1mA, VCE=10V at IC=10mA, VCE=10V at IC=150mA, VCE=10V at IC=500mA, VCE=10V Collector Cutoff Current at VCB=50V at VCB=60V at IC=10µA ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A Collector Emitter Breakdown Voltage at IC=10mA Emitter Ba |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor ST 2N5550 / 2N5551 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 50 mA Collector Emitter Breakdown Voltage at IC = 1 mA Collector Base Breakdown Voltage at IC = 100 µA Em |
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SEMTECH ELECTRONICS |
PNP Silicon Epitaxial Planar Transistor E=6V, -IC=2mA Current Gain Group O Y G L at -VCE=6V, -IC=150mA Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=50V Emitter Cutof |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor urrent at VEB=2V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=12V, IC=2mA Base Emitter Voltage at IC=2mA, VCE=12V Collector Output Capacitance at VCB=10V, f=1MHz Collector Base Breakdown Voltage at IC=10μA Colle |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor reakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=1A, IB=50mA Base Saturation Voltage at IC=1A, IB=50mA Gain Bandwidth Product |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor p R O Y P L Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC= |
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SEMTECH |
NPN Transistor Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200m |
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SEMTECH |
NPN Transistor Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200m |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor IC=1mA at VCE=5V, IC=10mA Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10µA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=4.5V Collector Saturatio |
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SEMTECH ELECTRONICS |
PNP Silicon Epitaxial Planar Transistor 00 / 2N5401 Characteristics at Tamb=25 oC Symbol DC Current Gain at-VCE=5V, -IC=1mA at -VCE=5V, -IC=10mA at -VCE=5V, -IC=50mA ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 Collector Emitter Breakdown Voltage at -IC=1mA Collector Base Br |
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SEMTECH |
NPN Silicon Transistor kdown Voltage at IC=10μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Base Emitter Voltage at VCE=1V, IC=150mA Collector Emitter Saturation Voltage at IC=500mA, IB=50mA |
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SEMTECH |
NPN Silicon Transistor er On Voltage at VCE = 1 V, IC = 2 A Transition Frequency at VCE = 1 V, IC = 250 mA Symbol hFE hFE hFE hFE ICBO ICES IEBO V(BR)CEO VCE(sat) VBE(on) fT Min. 100 15 100 15 100 3 Max. 260 260 100 100 1 0.8 1.5 - Unit µA µA mA V V V MHz SEMTECH ELEC |
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SEMTECH ELECTRONICS |
NPN Silicon Transistor 616A Characteristics at Tamb=25 OC Symbol DC Current Gain 2) Min. Typ. Max. Unit at VCE=2V, IC=100mA R O Y hFE hFE hFE hFE 135 200 300 81 600 100 - - 270 400 600 700 mV nA nA V V MHz pF µs µs µs at VCE=2V, IC=1A Base Emitter Voltage 2) a |
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SEMTECH ELECTRONICS |
NPN Silicon Transistor |
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SEMTECH ELECTRONICS |
PNP Silicon Epitaxial Planar Transistor |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor amb=25 OC Symbol DC Current Gain at VCE=1V, IC=5mA at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=2mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current |
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SEMTECH |
NPN Silicon Transistor Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=10μA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Collector Saturation Voltage at IC=0.8A, IB=0.08A Base Emitter Voltage at VCE=2V, |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor |
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Desde 2024. D4U Semiconductor.
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