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ST2SD655 |
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| Part Number | ST2SD655 |
| Manufacturer | SEMTECH |
| Description | ST 2SD655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, D, E and F, according to its DC current gain. On special ... |
| Features |
kdown Voltage at IC=10μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Base Emitter Voltage at VCE=1V, IC=150mA Collector Emitter Saturation Voltage at IC=500mA, IB=50mA Gain Bandwidth Product at VCE=1V, IC=150mA fT 250 MHz VCE(sat) 0.15 0.5 V VBE 1 V ICBO 1 μA V(BR)EBO 5 V V(BR)CEO 15 V V(BR)CBO 30 V hFE hFE hFE 250 400 600 500 800 1200 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated ... |
| Document |
 ST2SD655 Data Sheet
PDF 163.56KB |
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Desde 2024. D4U Semiconductor.
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