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SEMTECH |
NPN Transistor Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200m |
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SEMTECH |
NPN Transistor Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200m |
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SEMTECH |
NPN Transistor Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200m |
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SEMTECH |
NPN Silicon Transistor Voltage at IC=100μA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=30V Collector Saturation Voltage at IC=1.0A, IB=100mA Base Saturation Voltage at IC=1.0A, IB=100mA Collector Output Capacitance at VCB=6V, f=1MHz Transiti |
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SEMTECH |
NPN Silicon Transistor kdown Voltage at IC=10μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Base Emitter Voltage at VCE=1V, IC=150mA Collector Emitter Saturation Voltage at IC=500mA, IB=50mA |
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SEMTECH |
NPN Silicon Transistor Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200m |
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SEMTECH |
NPN Silicon Transistor er On Voltage at VCE = 1 V, IC = 2 A Transition Frequency at VCE = 1 V, IC = 250 mA Symbol hFE hFE hFE hFE ICBO ICES IEBO V(BR)CEO VCE(sat) VBE(on) fT Min. 100 15 100 15 100 3 Max. 260 260 100 100 1 0.8 1.5 - Unit µA µA mA V V V MHz SEMTECH ELEC |
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SEMTECH |
NPN Silicon Transistor at VCE=2V, IC=100mA R O Y at VCE=2V, IC=1A Base Emitter Voltage 2) at VCE=2V ,IC=50mA Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage 2) at IC=1A, IB=50mA Base Saturation Voltage 2) at I |
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SEMTECH ELECTRONICS |
NPN Silicon Transistor 616A Characteristics at Tamb=25 OC Symbol DC Current Gain 2) Min. Typ. Max. Unit at VCE=2V, IC=100mA R O Y hFE hFE hFE hFE 135 200 300 81 600 100 - - 270 400 600 700 mV nA nA V V MHz pF µs µs µs at VCE=2V, IC=1A Base Emitter Voltage 2) a |
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SEMTECH |
NPN Silicon Epitaxial Power Transistor turation Voltage at IC = 2 A, IB = 0.2 A Turn-on time Storage time Fall time at IC = 2 A, IB1 = -IB2 = 0.2 A,RL = 5 Ω, VCC = 10 V Symbol Min. Max. Unit hFE hFE hFE hFE hFE ICBO IEBO VBE(sat) VCE(sat) Ton Tstg tf 100 160 200 60 50 - 200 320 400 |
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SEMTECH |
NPN Silicon Transistor Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=10μA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Collector Saturation Voltage at IC=0.8A, IB=0.08A Base Emitter Voltage at VCE=2V, |
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SEMTECH |
NPN Silicon Transistor ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high efficiency with the low voltage power supply TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector |
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SEMTECH |
NPN Silicon Transistor CH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/08/2006 Free Datasheet http://www.datasheet4u.com/ ST 2SD1817Z SEMTECH ELECTRONICS LTD. (S |
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SEMTECH |
NPN Silicon Transistor kdown Voltage at IC=10μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Base Emitter Voltage at VCE=1V, IC=150mA Collector Emitter Saturation Voltage at IC=500mA, IB=50mA |
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SEMTECH |
NPN Silicon Power Transistor itter Saturation Voltage at IC = 2 A, IB = 0.2 A Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A Output Capacitance at VCB = 10 V, f = 1 MHz R Q P E SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed |
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SEMTECH |
NPN Silicon Power Transistor itter Saturation Voltage at IC = 2 A, IB = 0.2 A Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A Output Capacitance at VCB = 10 V, f = 1 MHz R Q P E SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed |
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SEMTECH |
NPN Silicon Transistor ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high efficiency with the low voltage power supply TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector |
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SEMTECH |
NPN Silicon Transistor at VCE=2V, IC=100mA R O Y at VCE=2V, IC=1A Base Emitter Voltage 2) at VCE=2V ,IC=50mA Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage 2) at IC=1A, IB=50mA Base Saturation Voltage 2) at I |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor ․High emitter-base voltage VEBO=7.5V(min)* ․High reverse hFE ․Low on resistance reverse hFE=20(min) (VCE=2V, IC=4mA) Ron=0.6Ω (Typ.) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Vol |
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SEMTECH ELECTRONICS |
NPN Silicon Transistor 616A Characteristics at Tamb=25 OC Symbol DC Current Gain 2) Min. Typ. Max. Unit at VCE=2V, IC=100mA R O Y hFE hFE hFE hFE 135 200 300 81 600 100 - - 270 400 600 700 mV nA nA V V MHz pF µs µs µs at VCE=2V, IC=1A Base Emitter Voltage 2) a |
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Desde 2024. D4U Semiconductor.
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