| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SAMWIN |
N-channel MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.75Ω)@VGS=10V ■ Gate Charge (Typ 37nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolog |
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SAMWIN |
N-channel MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.8 Ω)@VGS=10V ■ Gate Charge (Typ 47nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. T |
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SAMWIN |
N-channel MOSFET TO-220 TO-251 TO-252 TO-263 ■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typical 69nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 1 2 3 1 2 3 1 2 3 BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ 2 1. Gate 2. Drain |
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SAMWIN |
N-channel MOSFET TO- 220F TO-220 High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge (Typ 40nC) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC Power 12 3 12 3 1. Gate 2. Drain 3. Source General Description This |
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SAMWIN |
N-channel MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID 1 2 1 3 2 : 12.0A RDS(ON) : 0.7ohm 3 2 1. Gate 2. Drain 3. Source General Description T |
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SAMWIN |
N-channel MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Gate 2. Drain 3. Source 1 General Description T |
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SAMWIN |
N-channel D-PAK/I-PAK/TO-92 MOSFET TO-251 TO-252 TO-92 ■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Typical 5.6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced w |
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Samwin |
N-channel MOSFET TO-220F TO-247 High ruggedness Low RDS(ON) (Typ 0.35Ω)@VGS=10V Low Gate Charge (Typ 79nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED , Charger, PC Power 1 2 3 1 2 3 1. Gate 2. Drain 3. Source General Descripti |
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SAMWIN |
N-channel MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.5Ω)@VGS=10V ■ Gate Charge (Typical 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 BVDSS : 600V ID : 10.0A RDS(ON) : 0.5ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSF |
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Samwin |
N-channel MOSFET N-channel Enhanced mode DFN3*3 MOSFET High ruggedness Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ 9.4mΩ)@VGS=4.5V Low Gate Charge (Typ 15.4nC) Improved dv/dt Capability 100% Avalanche Tested Application:DC-DC Converter, Inverter, Synchronous |
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Samwin |
N-channel MOSFET N-channel Enhanced mode TO-220F MOSFET High ruggedness Low RDS(ON) (Typ 0.6Ω)@VGS=10V Low Gate Charge (Typ 54nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED, Charger, PC Power TO-220F 1 23 1. Gate 2. Drain 3. Sour |
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Desde 2024. D4U Semiconductor.
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