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SW19N10 |
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| Part Number | SW19N10 |
| Manufacturer | SAMWIN |
| Title | N-channel MOSFET |
| Features |
■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Gate 2. Drain 3. Source 1 General Description This N-channel enhancement mode field-effect power ... |
| Document |
 SW19N10 Data Sheet
PDF 809.88KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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