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2SB1185 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transistors www.DataSheet4U. |
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2SB1182 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit: mm) (96-131 |
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2SB1184 O zExternal dimensions W WW .100Y.C M.TW WW 00Y.CO 1) Low W WW .100Y.C M.TW T V CE(sat). . O W OM WW 002SB1243 W.1 .CO 2SB1184 Y.C VCE(sat) = -0.5V (Typ.)WW W Y W .TW W 0 T ± . 1 + 0.2 0 WW .100Y.C M T ± M . .B = -2A / -0.2A) 2.3 −0.1 1 M . 6.5±0.2 O |
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2SB1187 |
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Digital transistor 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of |
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PNP Transistor 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 +0.2 −0.1 2SA1515S 4 +− 0 |
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Dual Digital Transistors 1)Two DTA114E chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. lOutli |
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Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of |
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Power Transistor 1)Low VCE(sat) VCE(sat)=-200mV(Typ.) (IC/IB=-500mA/-50mA) 2)High breakdown voltage. BVCEO=-80V 3)Complements the 2SD1782K FRA. lOutline SOT-346 SC-59 SMT3 lInner circuit Datasheet AEC-Q101 Qualified lApplication DRIVER lPackag |
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Power Transistor 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA) 4) Lead Free/RoHS Compliant. 2SB1260 (SC-62) |
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Medium power Transistor 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 2SB1240 6.8±0.2 |
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Medium power Transistor 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1188 4.5+−00..21 1.6±0.1 1.5−+00..12 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 0.5±0.1 4.0±0 |
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Transistor 1) Low VCE(sat). VCE(sat)≦ -500mV ( IC= -500mA / I B= -50mA) 2) IC= -0.8A. 3) Complements the 2SD1781K. lOutline SOT-346 SC-59 SMT3 lInner circuit Datasheet lApplication LOW FREQUENCY POWER AMPLIFIER lPackaging specifications Pa |
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Low-frequency Transistor 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAbsolute maximum rating |
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Low-frequency Transistor 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAbsolute maximum rating |
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PNP -500mA -50V Digital Transistor 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, |
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Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of |
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Digital transistors |
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Medium power transistor 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter |
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Color image sensor heads 1) Signal amplifier is built into the image sensor IC in order to increase immunity to external noise. 2) Employing low voltage driving sensor enables 3.3V drive which is identical to the ASIC. 3) The LED light source is mounted on the same substrate |
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Desde 2024. D4U Semiconductor.
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