2SB1189 |
Part Number | 2SB1189 |
Manufacturer | ROHM (https://www.rohm.com/) |
Description | Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (T... |
Features |
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current IC −0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. Unit V V V A W ∗1 ∗2 °C °C Packaging specifi... |
Document |
2SB1189 Data Sheet
PDF 89.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1180 |
Panasonic |
Silicon PNP Transistor | |
2 | 2SB1180A |
Panasonic |
Silicon PNP Transistor | |
3 | 2SB1181 |
Rohm |
Power Transistor | |
4 | 2SB1181 |
Kexin |
Power Transistor | |
5 | 2SB1182 |
Rohm |
Medium power Transistor | |
6 | 2SB1182 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
7 | 2SB1182 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
8 | 2SB1182 |
Kexin |
Medium Power Transistor | |
9 | 2SB1182 |
Weitron |
PNP PLASTIC ENCAPSULATE TRANSISTORS | |
10 | 2SB1182 |
UTC |
PNP TRANSISTOR |