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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1842-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emi |
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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1846-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E A |
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Renesas Technology |
Silicon N Channel IGBT • High speed switching • Low on-state voltage • Fast recovery diode www.DataSheet4U.com Preliminary REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. |
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Renesas Technology |
Silicon N Channel IGBT • High speed switching • Low on-state voltage • Fast recovery diode www.DataSheet4U.com Preliminary REJ03G1834-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. |
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Renesas Technology |
Silicon N Channel IGBT • High speed switching • Low on-state voltage • Fast recovery diode www.DataSheet4U.com Preliminary REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. |
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Renesas Technology |
Silicon N-Channel IGBT Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = |
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Renesas Technology |
Silicon N-Channel IGBT Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 95 ns typ. (at IC = 30 A, Resi |
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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) C 4 www.DataSheet4U.com Preliminary REJ03G1838-0100 Rev.1.00 Oct 14, 2009 G 1 2 1. Gate 2. Collector 3. Emitter 4. Collecotor |
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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1845-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E A |
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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emi |
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Renesas Technology |
Silicon N-Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E |
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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E |
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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1844-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emi |
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Renesas Technology |
Silicon N Channel IGBT • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1847-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E A |
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Renesas Technology |
IGBT Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology |
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Desde 2024. D4U Semiconductor.
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