RJH60F6DPK Renesas Technology Silicon N-Channel IGBT Datasheet. existencias, precio

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RJH60F6DPK

Renesas Technology
RJH60F6DPK
RJH60F6DPK RJH60F6DPK
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Part Number RJH60F6DPK
Manufacturer Renesas (https://www.renesas.com/) Technology
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th...
Features
 Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current T...

Document Datasheet RJH60F6DPK Data Sheet
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