| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Renesas Technology |
(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 o |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS (on) = 4.1 mΩ typ. www.DataSheet4U.com • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RENESAS Packa |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline LDPAK D 4 4 4 G 1 S 1 2 1 3 2 3 2 H7N0608LS H7N0608LM 3 H7N0608LD 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Oct.30.2003, page 1 |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) I |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching www.DataSheet4U.com R • Low on-resistance DS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS (on) =25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on) = 25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-(S)) D 1 2 |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Dra |
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Renesas Technology |
Silicon N-Channel MOSFET www.DataSheet4U.com R • Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDP |
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Renesas Technology |
Silicon N-Channel MOSFET www.DataSheet4U.com R • Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDP |
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Renesas Technology |
Silicon N-Channel MOSFET www.DataSheet4U.com R • Low on-resistance DS (on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S) |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 4.0 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-( |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 4.0 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-( |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 4.1 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N0602AB Absolute Maximum Ratings (Ta = 25°C) |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS (on) = 4.1 mΩ typ. www.DataSheet4U.com • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RENESAS Packa |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 26 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.30.2003, page 1 of 9 H7N0608AB Absolute Maximum Ratings (Ta = 25°C) |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1122-0400 (Previous: ADE-208-1569B) Rev.4.0 |
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Renesas Technology |
(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 o |
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Renesas Technology |
(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 o |
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Desde 2024. D4U Semiconductor.
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