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H7N1002AB |
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| Part Number | H7N1002AB |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Availab... |
| Features |
• Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperatur... |
| Document |
 H7N1002AB Data Sheet
PDF 231.02KB |
Similar Datasheet
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| 1 | H7N1002LD |
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| 2 | H7N1002LM |
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| 3 | H7N1002LS |
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| 4 | H7N1004AB |
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| 5 | H7N1004DL |
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| 6 | H7N1004DS |
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