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Renesas |
Silicon N Channel Power MOS FET • Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Ele |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage www.D |
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Renesas |
Built in SBD N Channel Power MOS FET High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0940EJ0400 Rev.4.00 Mar 22, 2013 Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 |
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Renesas |
N-Channel Power MOSFET • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 32 S 1 www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to |
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Renesas Technology |
Silicon N-Channel MOSFET High speed switching Low drive current Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V) Pb-free Halogen-free High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Renesas Technology |
Silicon N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 |
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Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current • High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source vol |
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Renesas Technology |
Silicon N Channel Power MOS FET High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free REJ03G1918-0100 Rev.1.00 Apr 21, 2010 Outline RENESAS Package code: PWSN |
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Renesas Technology |
Silicon N Channel Power MOS FET Power Switching High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1789-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: P |
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Renesas |
N-Channel Power MOSFET High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0082EJ0102 (Previous: REJ03G1768-0101) Rev.1.02 Jul 30, 2010 Low on-resistance RDS(on) = 30 m typ. (at VGS = 10 V) Pb-free Halogen-free Ou |
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Renesas |
N-Channel Power MOSFET High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0083EJ0102 (Previous: REJ03G1769-0101) Rev.1.02 Jul 30, 2010 Low on-resistance RDS(on) = 15 m typ. (at VGS = 10 V) Pb-free Halogen-free Ou |
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Renesas |
N-Channel Power MOSFET High speed switching Low drive current Low on-resistance RDS(on) = 17 m typ. (at VGS = 10 V) R07DS0093EJ0200 (Previous: REJ03G1886-0100) Rev.2.00 Aug 17, 2010 Pb-free Halogen-free High density mounting Outline RENESAS Package code: |
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Renesas |
MOS FET Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. D |
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Renesas |
High Speed Power Switching MOS FET Low on-resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSP0004ZB-A Package name: SOT-223 4 3 2 1 G Absolute Maximum Ratings Item Symbol Drain to |
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Desde 2024. D4U Semiconductor.
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