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RJK6002DPE |
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| Part Number | RJK6002DPE |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperatur... |
| Document |
 RJK6002DPE Data Sheet
PDF 98.22KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RJK6002DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 2 | RJK6002DPH-E0 |
Renesas |
MOS FET |
|
| 3 | RJK6002DJE |
Renesas |
MOS FET |
|
| 4 | RJK6006DPD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | RJK6006DPP-A0 |
Renesas |
Power MOSFET |
|
| 6 | RJK6006DPP-E0 |
Renesas |
N-Channel Power MOSFET |
|
| 7 | RJK6009DPP |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 8 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET |
|
| 9 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET |
|
| 10 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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