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P-Channel Power MOSFET Super low on-state resistance : RDS(on) = 25 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m Max. ( VGS = -4.5 V, ID = -10 A ) Low input capacitance : Ciss = 1650 pF Typ. Built-in gate protection diode Designed for automotive application |
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Renesas |
N-Channel Power MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE |
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N-Channel MOSFET Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A) Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V) Logic level drive type Design |
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N-Channel Power MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode ORDERING INFORMATION |
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N-Channel Power MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode ORDERING INFORMATION |
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P-channel Power MOSFET Super low on-state resistance : RDS(on) = 48 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 64 m Max. ( VGS = -4.5 V, ID = -10 A ) Low input capacitance : Ciss = 1650 pF Typ. Built-in gate protection diode Designed for automotive application |
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N-Channel Power MOSFET • Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON |
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N-Channel Power MOSFET Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A) Logic level drive type Gate to Source ESD protection diode built in Designed |
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Dual N-channel Power MOSFET Super low on-state resistance RDS(on) = 10.1 m MAX. (VGS = 10 V, ID = 15 A) Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON dual Outline Remark: Strong el |
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Dual N-channel Power MOSFET Super low on-state resistance RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A) Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Small size p |
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Dual N-channel Power MOSFET Super low on-state resistance RDS(on) = 21 m MAX. (VGS = 10 V, ID = 15 A) Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON dual Outline Remark: Strong elec |
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Renesas |
N-Channel Power MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE |
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Renesas |
N-Channel Power MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE |
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Renesas |
N-Channel Power MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode ORDERING INFORMATION |
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Desde 2024. D4U Semiconductor.
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