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NP23N06YDG |
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| Part Number | NP23N06YDG |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) • Low Ciss... |
| Features |
• Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP23N06YDG -E1-AY ∗1 NP23N06YDG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package 8-pin HSON, Taping (E1 type) 8-pin HSON, Taping (E2 type) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = ... |
| Document |
 NP23N06YDG Data Sheet
PDF 213.77KB |
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Desde 2024. D4U Semiconductor.
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