| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Renesas |
Silicon Power LDMOS FET • • • • • R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) |
|
|
|
|
Renesas |
Silicon Power LDMOS FET • • • • • R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) H |
|
|
|
|
Renesas |
Silicon Power MOSFET • • • • • R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) H |
|
|
|
|
Renesas |
Silicon Power LDMOS FET • • • • • R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) |
|
|
|
|
Renesas |
7.5V OPERATION SILICON RF POWER LDMOS FET • High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High linear gain : GL = 20.5 dB TYP. ( |
|
|
|
|
Renesas |
N-CHANNEL SILICON POWER LDMOS FET • Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package • Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, |
|
Desde 2024. D4U Semiconductor.
|