NE5550279A Renesas Silicon Power LDMOS FET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

NE5550279A

Renesas
NE5550279A
NE5550279A NE5550279A
zoom Click to view a larger image
Part Number NE5550279A
Manufacturer Renesas (https://www.renesas.com/)
Description Summary First edition issued Rev. 1.00 Date Mar 28, 2012 Page − All trademarks and registered trademarks are the property of their respective owners. C-1 Free Datasheet http://www.datasheet4u.com/...
Features




• R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS
• 150 MHz Band Radio System
• 460 MHz Band Radio System
• 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550279A Order Number NE5550279A-A Package 79A (Pb ...

Document Datasheet NE5550279A Data Sheet
PDF 486.44KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 NE5550234
Renesas
Silicon Power MOSFET Datasheet
2 NE5550779A
Renesas
Silicon Power LDMOS FET Datasheet
3 NE5550979A
Renesas
Silicon Power LDMOS FET Datasheet
4 NE555
Texas Instruments
Precision Timer Datasheet
5 NE555
ST Microelectronics
General-purpose single bipolar timer Datasheet
6 NE555
Fairchild
Single Timer Datasheet
More datasheet from Renesas
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad