Renesas 5N3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	5N3011	Renesas	N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Dr
2	H5N3005LM	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 4 RENESAS Package code: PRSS000
3	5N3011P	Renesas	N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-D
4	H5N3003P	Renesas Technology	N-Channel MOSFET • Low on-resistance • Low leakage current • High Speed Switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Aug.01.2003, page 1 of 9 www.DataSheet4U.com H5N3003P Absolute Maximum Ratings (Ta = 25°C) Item Drain
5	H5N3004P	Renesas Technology	N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) • Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3004P www.DataSheet4U.com Absolute Maximum Ratings (Ta=25°C) Item Dr
6	H5N3005LS	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 4 RENESAS Package code: PRSS000
7	H5N3007CF	Renesas Technology	N-Channel MOSFET • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Dr
8	H5N3011P	Renesas Technology	N-Channel MOSFET • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-D
9	H5N3005LD	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 4 RENESAS Package code: PRSS000
10	H5N3008P	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maxi