H5N3008P |
Part Number | H5N3008P |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | H5N3008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0539-0300 Rev.3.00 Oct 16, 2006 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Bui... |
Features |
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 ... |
Document |
H5N3008P Data Sheet
PDF 145.13KB |
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