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Renesas |
2SC5250 |
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Renesas |
2SC535 Collector to emitter saturation voltage VCE(sat) — 0.17 — Gain bandwidth product fT 450 940 — Collector output capacitance Cob — 0.9 1.2 Power gain PG 17 20 — Noise figure NF — 3.5 5.5 Input admittance (typ) yie 1.3 + j5.3 Reverse tran |
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Renesas |
2SC3617 • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance |
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Renesas |
Silicon NPN Transistor |
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Renesas |
2SC2310 pt. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur w |
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Renesas |
Silicon NPN Transistor |
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Renesas |
NPN SILICON RF TRANSISTOR • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gai |
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Renesas |
Silicon NPN Transistor |
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Renesas |
2SC4308 tter cutoff current IEBO — — 10 µA VEB = 3 V, IE = 0 DC current transfer ratio hFE 50 — 200 VCE = 5 V, IC = 50 mA Gain bandwidth product fT 1.5 2.5 — GHz VCE = 5 V, IC = 50 mA Collector output capacitance Cob — 4.0 — pF VCB = 10 V, IE = 0, f |
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Renesas |
Silicon NPN Epitaxial Transistor tage VBE Note: 1. The 2SC2462 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 Min 50 40 5 — — 100 — — Typ — — — — — — — — Max — — — 0.5 0.5 500 0.2 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE |
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Renesas |
Silicon NPN Epitaxial Type Transistor put capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min 90 90 5 — — 400 — — — — Typ — — — — — — 0.05 0.7 310 3 Max — — — 0.1 0.1 800 0.10 1.0 — — Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = |
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Renesas |
Silicon NPN Transistor ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility t |
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Renesas |
2SC2610 off current ICEO — — 1.0 µA VCE = 250 V, RBE = ∞ DC current transfer ratio hFE 30 — 200 VCE = 20 V, IC = 20 mA Collector to emitter saturation voltage VCE(sat) — — 1.5 V IC = 20 mA, IB = 2 mA Gain bandwidth product fT 50 80 — MHz VCE = 20 |
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Renesas |
Silicon Power Transistors • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage |
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Renesas Technology |
Silicon NPN Epitaxial Type Transistor Low frequency amplifier REJ03G0760-0100 (Previous ADE-208-1479) Rev.1.00 Aug.10.2005 Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 1 3. Collector 2 *CMPAK is a trademark of Renesas Technology Corp. Abso |
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Renesas |
NPN Transistor |
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Renesas |
2SC5480 • High breakdown voltage VCES = 1500 V • Isolated package TO –3PFM • Built-in damper diode Outline TO –3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter www.DataSheet4U.com 2SC5480 Absolute Maximum Ratings (Ta = 25°C) Item Collector to e |
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Renesas Technology |
Silicon NPN Epitaxial Type Transistor • High frequency amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5851 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current |
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Renesas |
NPN Transistor • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V –0.05 1.5 TYP. 0.65 –0.15 +0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Colle |
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Renesas |
Silicon NPN Epitaxial Transistor 63 is grouped by hFE as follows. Grade D E Mark DD DE hFE 250 to 500 400 to 800 Min 55 50 5 — — 250 — — Typ — — — — — — — — Max — — — 0.5 0.5 800 0.5 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 V |
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Desde 2024. D4U Semiconductor.
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