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2SC4499S Silicon NPN Transistor

2SC4499S


2SC4499S
Part Number 2SC4499S
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2SC4499S

Hitachi Semiconductor
2SC4499S
Part Number 2SC4499S
Manufacturer Hitachi Semiconductor
Title NPN TRANSISTOR
Description 2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter volta.
Features — — Typ — — — — — — — — — — — Max — — 20 50 — — 1.0 1.5 1.0 2.0 1.0 V V µs µs µs Unit V V µA Test conditions I C = 0.1 A, RBE = ∞ L = 100 mH I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 0.25 A*1 VCE = 5 V, IC = 0.5 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.5 A, IB1 =
  –IB2 = 0.1 A, VCC ≅ 150 V 2 2SC4499(L)/(S) Maximum Collector Dissipation.

2SC4499S

Kexin
2SC4499S
Part Number 2SC4499S
Manufacturer Kexin
Title Silicon NPN Transistor
Description SMD Type Silicon NPN Triple Diffused 2SC4499S TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High speed and high voltage switching +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +.
Features High speed and high voltage switching +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissi.

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