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Rectron |
P-Channel Enhancement Mode Power MOSFET VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power manage |
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RECTRON |
NPN Transistor C546A/BC546B/BC546C VCBO IC = 100uA, IE = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Emitter Base Voltage BC546/BC546A/BC546B/BC546C VEBO IE = 10uA, IC = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Collector Cut off |
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Rectron |
N-Channel Enhancement Mode Power MOSFET ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dis |
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RECTRON |
NPN Transistor C546A/BC546B/BC546C VCBO IC = 100uA, IE = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Emitter Base Voltage BC546/BC546A/BC546B/BC546C VEBO IE = 10uA, IC = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Collector Cut off |
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Rectron |
GLASS PASSIVATED BRIDGE RECTIFIER * Ideal for printed circuit board * Surge overload rating: 60 amperes peak * Ideal for printed circuit board * Plastic material has Underwriters Laboratory * plastic technique * Reliable low cost construction utilizing molded KBP .460(11.70) .420(10 |
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Rectron Semiconductor |
DIGITAL TRANSISTORS * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of t |
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Rectron |
N-Channel Enhancement Mode Power MOSFET VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram Application Direct logic-level interface: TTL/CMO |
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Rectron |
SOT-23 SCHOTTKY DIODE * Low Turn-on voltage * Fast switching MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERI |
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Rectron Semiconductor |
SILICON BRIDGE RECTIFIER * Ideal for printed circuit board * Low forward voltage * Low leakage current * Polarity: marked on body * Mounting position: Any * Weight: 4.0 grams .083(2.1) .067(1.7) .043(1.1) .035(0.9) AC .935(23.7) .895(22.7) RS-4M .134(3.4) .122(3.1) .147(3.7 |
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Rectron Semiconductor |
SCHOTTKY BARRIER RECTIFIER * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability MECHANICAL DATA * Case: ITo-220 molded plastic * Epoxy: Device has UL flammabil |
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Rectron Semiconductor |
SCHOTTKY BARRIER RECTIFIER * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability MECHANICAL DATA * Case: ITo-220 molded plastic * Epoxy: Device has UL flammabil |
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Rectron |
ZENER DIODE |
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Rectron Semiconductor |
DIGITAL TRANSISTOR * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of t |
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Rectron |
SILICON BRIDGE RECTIFIER * Good for automation insertion * Surge overload rating - 15 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body * Mounting position: Any * Weigh |
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RECTRON |
GLASS PASSIVATED SILICON RECTIFIER * Low leakage * Low forward voltage drop * High current capability * High surge capability * High reliability MECHANICAL DATA * Case: Slim PAQ * Epoxy: Device has UL flammability classification 94V-O * Lead: MIL-STD-202E method 208C guaranteed * Moun |
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RECTRON |
NPN Transistor C546A/BC546B/BC546C VCBO IC = 100uA, IE = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Emitter Base Voltage BC546/BC546A/BC546B/BC546C VEBO IE = 10uA, IC = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Collector Cut off |
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Rectron Semiconductor |
HIGH EFFICIENCY RECTIFIER * Low power loss,high efficiency * Low leakage * Low forward voltage drop * High current capability * High speed switching * High reliability * High current surge DO-201AD MECHANICAL DATA * Epoxy: Device has UL flammability classification 94V-O * C |
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Rectron |
ZENER DIODE |
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Rectron |
ZENER DIODE |
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Rectron |
ZENER DIODE |
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Desde 2024. D4U Semiconductor.
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