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2N7002 |
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| Part Number | 2N7002 |
| Manufacturer | GME |
| Description | Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES High Density Cell Design For Low Pb RDS(ON). Lead-free Voltage Controlled Small Signal Switch. Rugged and Reliable. High Saturation Current Capability. MSL 1 APPLICATIONS N-channel enhancement mode effect transistor. Switching application. . |
| Features |
High Density Cell Design For Low Pb RDS(ON). Lead-free Voltage Controlled Small Signal Switch. Rugged and Reliable. High Saturation Current Capability. MSL 1 APPLICATIONS N-channel enhancement mode effect transistor. Switching application. SOT-23 ORDERING INFORMATION Type No. Marking 2N7002 7002 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VDGR VGSS ID PD RθJA Drain-Source voltage 60 Drain-Gate voltage(RGS≤1MΩ) 60 Gate -Source voltage - continuous ±20 -Non Repetitive (tp<50μs) ±40 Maximum Drain cur. |
| Datasheet |
 2N7002 Data Sheet
PDF 297.36KB |
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2N7002 |
| Part Number | 2N7002 |
| Manufacturer | Rectron |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | 2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram Application Direct logic-level in. |
| Features | VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. Battery operated systems Solid-state relays Marking and pin assignm. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | Infineon |
| Title | Small Signal Transistor |
| Description | OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • Avalanche rated • fast switching • Pb-free lead-plating; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002 Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3Ω 4 0.3 A PG-SOT23 3 1 . |
| Features |
• N-channel • Enhancement mode • Logic level • Avalanche rated • fast switching • Pb-free lead-plating; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002 Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3Ω 4 0.3 A PG-SOT23 3 1 2 Type 2N7002 Package Tape and Reel Information PG-SOT-23 H6327: 3000 pcs/reel Marking 72s HalogenFree Packing Yes Non Dry Parameter Sym. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | Philips |
| Title | N-channel vertical D-MOS transistor |
| Description | N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits, with applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN DESCRIPTION 1 gate 2 source 3 drain QUICK REFE. |
| Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits, with applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN DESCRIPTION 1 gate 2 source 3 drain QUICK REFE. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | nexperia |
| Title | 300mA N-channel MOSFET |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology 1.3 Applications Logic level translato. |
| Features | and benefits Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology 1.3 Applications Logic level translators High-speed line drivers 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-channel FET |
| Description | These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most appli. |
| Features |
• High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fa. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | Central Semiconductor |
| Title | SILICON N-CHANNEL MOSFET |
| Description | The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source . |
| Features | A 60 105 VGS(th) VDS=VGS, ID=250μA 1.0 2.1 VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=11.5mA rDS(ON) VGS=10V, ID=500mA 3.7 rDS(ON) VGS=10V, ID=500mA, TA=100°C rDS(ON) VGS=5.0V, ID=50mA 6.2 rDS(ON) VGS=5.0V, ID=50mA, TA=100°C gFS VDS=10V, ID=200mA 80 MAX 100 100 1.0 500 2.5 3.75 0.375 1.5 7.5 13.5 7.5 13.5 UNITS V V V mA mA mA mA mA mW °C °C/W UNITS. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | Microchip |
| Title | N-channel MOSFET |
| Description | The 2N7002 is a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive. |
| Features |
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | ST Microelectronics |
| Title | N-Channel MOSFET |
| Description | bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance, rugged avalanche characteristics and cless critical alignment steps therefore a uremarkable . |
| Features |
Type
VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
< 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A
t(s ■ Low Qg uc ■ Low threshold drive rodApplication te P ■ Switching applications oleDescription bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance,. |
2N7002 |
| Part Number | 2N7002 |
| Manufacturer | Unisonic Technologies |
| Title | N-CHANNEL POWER MOSFET |
| Description | The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugge. |
| Features | * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002L-AE2-R 2N7002G-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 Pin Assignment 1 2 3 G S D Packing Tape Reel MARKING 3P . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N700 |
Motorola |
PNP Transistor |
|
| 2 | 2N7000 |
Microchip |
N-Channel DMOS FET |
|
| 3 | 2N7000 |
Motorola Inc |
TMOS FET Transistor |
|
| 4 | 2N7000 |
NXP |
N-channel MOSFET |
|
| 5 | 2N7000 |
Vishay Siliconix |
N-Channel MOSFET |
|
| 6 | 2N7000 |
NTE |
N-Channel MOSFET |
|
| 7 | 2N7000 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | 2N7000 |
ST Microelectronics |
N-Channel MOSFET |
|
| 9 | 2N7000 |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | 2N7000 |
UTC |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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