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IXYS Corporation |
PolarTM HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Fast recovery intrinsic diode Applications z DC-DC converters z z z z Battery |
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IXYS Corporation |
Polar Power MOSFET HiPerFET • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 • • • • Weight substrate - High power dissipation - Isolated mounting surface |
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RFE |
HIGH VOLTAGE RECTIFIER • Low cost • Diffused junction • Low leakage • Low forward voltage drop • High current capability • Plastic material carries U/L recognition 94V-O MECHANICAL DATA • Case: JEDEC DO-41 molded plastic • Terminals: Axial leads • Solderable per MIL-STD-20 |
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IXYS Corporation |
Polar Power MOSFET HiPerFET • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 • • • • • substrate - High power dissipation - Isolated mounting surface - 250 |
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IXYS Corporation |
PolarHV HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless |
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RFE |
POWER RESISTORS • Flameproof UL94 V-0 silicone coating • High surge/overload capability • Wide resistance range • Coating and mark resist Trichloroethylene, Freon, and other cleaning agents. • Lower cost alternative to carbon composition resistors. PART NUMBER EXAM |
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Desde 2024. D4U Semiconductor.
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