Prisemi PSB Hoja de datos

No.	parte #	Fabricante	Descripción
1	PSBDAF60V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
2	PSBD3D40V1H	Prisemi	Schottky Barrier Diode  Ultra Small mold type. (SOD-323)  Low IR  High reliability. Applications  Low current rectification Construction  Silicon epitaxial planar Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max ref
3	PSBD2FD40V1HA	Prisemi	Schottky Barrier Diode  Ultra Small mold type. (DFN1006-2L)  Low IR  High reliability. Applications  Low current rectification PSBD2FD40V1HA Schottky Barrier Diode DFN1006-2L(Bottom View) Construction  Silicon epitaxial planar Mechanical Characteristics  Mounting
4	PSBDBF120V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
5	PSBDBF150V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
6	PSBDAF150V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
7	PSBD2XD30V005	Prisemi	Schottky Barrier Diode  Ultra Small mold type. DFN0603-2L  Low IR  High reliability. Applications  Low current rectification Construction  Silicon epitaxial planar Mechanical Characteristics  Mounting position: Any  Qualified max reflow temperature:260℃  Device mee
8	PSBD9D30V01	Prisemi	Schottky Barrier Diode  Ultra Small mold type. SOD-923  Low IR  High reliability. Applications  Low current rectification Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 r
9	PSBD2FD40V01	Prisemi	Schottky Barrier Diode  Ultra Small mold type. DFN1006-2L  Low IR  High reliability. Applications  Low current rectification PSBD2FD40V01 Schottky Barrier Diode DFN1006-2L(Bottom View) Construction  Silicon epitaxial planar Pin 1 Pin 2 Circuit Diagram Mechanical
10	PSBD1DF40V2L	Prisemi	Schottky Barrier diode  Ultra Small mold type. (SOD-123FL)  Low VF  High reliability. Construction  Silicon epitaxial planar Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL
11	PSBD2FD20V1H	Prisemi	Schoktty Barrier Diode  Forward Current: 1A  Reverse voltage: 20V  Low forward voltage  Low leakage current  Trench MOS barrier Schottky technology  Ultra Small mold type. (DFN1006-2L) PSBD2FD20V1H Low VF Schoktty Barrier Diode DFN1006-2L (Bottom View) Applications
12	PSBDBF20V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
13	PSBDBF40V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
14	PSBDBF60V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
15	PSBDBF80V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
16	PSBDBF100V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
17	PSBDBF200V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
18	PSBDAF20V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
19	PSBDAF40V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect
20	PSBDAF80V5	Prisemi	Schottky Barrier diode ¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, high efficiency ¾ High forward surge current capability ¾ For use in low voltage, high frequency inverters, free wheeling, and polarity protect