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PSBD2FD20V1H |
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| Part Number | PSBD2FD20V1H |
| Manufacturer | Prisemi |
| Description | Feature Forward Current: 1A Reverse voltage: 20V Low forward voltage Low leakage current Trench MOS barrier Schottky technology Ultra Small mold type. (DFN1006-2L) PSBD2FD20V1H Low VF Sch... |
| Features |
Reverse voltage(repetitive peak)
Reverse voltage (DC)
Average rectified forward current Non-Repetitive Peak Forward SurgeCurrent(8.3ms single half sine-wave superimposed on rated load)
Symbol
VRM VR Io IFSM
Parameter
Repetitive peak forward current ( tp ≤ 1ms; δ ≤ 0.25) Power Dissipation
Thermal resistance,Note1
Operating Junction temperature Range
Storage temperature
Symbol
IFRM PD RθJA Tj Tstg
limits
20 20 1 4.5
limits
3 400 250 -55 to 125 -55 to 125
PSBD2FD20V1H
Unit
V V A A
Unit
A mW ℃/W ℃ ℃
IF –Forward Current （mA） IR –Reverse Current （uA） Typical Characteristics 1000 100 10 1.0 ... |
| Document |
 PSBD2FD20V1H Data Sheet
PDF 364.61KB |
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Desde 2024. D4U Semiconductor.
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